Work

AC transconductance: A novel method to characterize oxide traps in advanced FETs without a body contact

Year: 2012

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2012.6479074

Authors: X. Sun, N. Xu, F. Xue, A. Alian, F. Andrieu, B. Y. Nguyen, T. Poiroux, O. Faynot, J. Lee, S. Cui, T. P. Ma

Institutions: Yale University, University of California, Berkeley, The University of Texas at Austin, IMEC, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Materials Research Science and Engineering Center, Harvard University, Division of Materials Research

OpenAlex ID: W2011836718

FWCI: 3.656

Cites: 6

Cited by: 15

Related to: 10