Work

Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

Year: 2005

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2005.04.070

Authors: J. Buckley, B. De Salvo, D. Deleruyelle, M. Gely, G. Nicotra, S. Lombardo, J.F. Damlencourt, Ph. Hollinger, F. Martin, S. Deleonibus

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Château Gombert, Université de Provence Aix-Marseille I, Institute for Microelectronics and Microsystems

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2012215324

FWCI: 2.459

Cites: 7

Cited by: 57

Related to: 10