Year: 1985
Type: article
Abstract: Ion beam‐assisted etching of aluminum, in which an inert gas ion beam and a reactive gas are simultaneously applied to a substrate, was investigated for its fine line etching capability. As a result of the collimated nature of the ion beam, extremely high resolution, anisotropic etching of aluminum samples patterned with trilevel photoresist was demonstrated. Etch rates of 2000 Å/min were routinely achieved in this ion beam‐assisted etching mode. In addition, etching behavior as a function of ion energy, ion flux, and reactive gas intensity was also examined.
DOI: 10.1149/1.2114271
Author: L. Y. Tsou
Institution: AT&T (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2012558192