Work

Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-k Gate Stacks

Year: 2007

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.46.1910

Authors: Heiji Watanabe, Shinya Horie, Takashi Minami, Naomu Kitano, Motomu Kosuda, Takayoshi Shimura, Kiyoshi Yasutake

Institutions: The University of Osaka, Canon Anelva (Japan), Anelva Corporation (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013666489

FWCI: 1.892

Cites: 7

Cited by: 14

Related to: 10