Work

Strain relaxation and misfit dislocation in SiGe epilayers grown in micron size windows by MBE

Year: 2001

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(01)01521-4

Authors: Hui Xiong, Xiang-Jiu Zhang, Zuiming Jiang, Jihuang Hu, Bin Shi, Xingfei Zhou, Weirong Jiang, Dongzhi Hu, Yongliang Fan

Institution: Fudan University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2014303683

FWCI: 0.486

Cites: 8

Cited by: 5

Related to: 10