Author

Xiangjiu Zhang

Observed names: Xiang-Jiu Zhang, Xiang-jiu Zhang, ZHANG XIANG-JIU, Zhang Xiang-Jiu, Zhang Xiang-jiu

Institution: Fudan University

Observed institution: Fudan University

OpenAlex ID: A5000523173

Solid state reaction of Co,Ti with epitaxially-grown Si1−xGex film on Si(100) substrate

1995 · Wen-Jie Qi, Bing-Zong Li, et al. · Journal of Applied Physics · 50

SiGe/Si Mach–Zehnder interferometer modulator based on the plasma dispersion effect

1999 · Baojun Li, Zuimin Jiang, et al. · Applied Physics Letters · 15

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

1998 · Zuimin Jiang, Amei Xu, et al. · Thin Solid Films · 14

Si1−xGex/Si asymmetric 2×2 electro-optical switch of total internal reflection type

1995 · Yong Gao, Xiding Liu, et al. · Applied Physics Letters · 14

Boron-mediated growth of Ge quantum dots on Si(100) substrate

2000 · Xingfei Zhou, Bin Shi, et al. · Thin Solid Films · 12

SiGe quantum dot molecules grown on patterned Si (001) substrates

2008 · Hongbin Yang, Xiang-jiu Zhang, et al. · Journal of Applied Physics · 8

Quantum confinement of holes in Si1−x Gex /Si quantum wells studied by admittance spectroscopy

1995 · Fang Lu, Jiayu Jiang, et al. · Physical review. B, Condensed matter · 8

Suppression of Si-Ge interfacial vibration mode in the Raman spectrum of a Si6 Ge4 superlattice

1996 · Chi Sheng, Tie-cheng Zhou, et al. · Physical review. B, Condensed matter · 7

Observation of boron doping induced surface roughening in silicon molecular beam epitaxy

1996 · Xuekun Lu, Zuimin Jiang, et al. · Applied Physics Letters · 6

Strain relaxation and misfit dislocation in SiGe epilayers grown in micron size windows by MBE

2001 · Hui Xiong, Xiang-Jiu Zhang, et al. · Journal of Crystal Growth · 5

Surfactant influence on the Ge heteroepilayer on Si(0 0 1) studied by X-ray diffraction and atomic force microscopy

1997 · Haijun Zhu, Zuimin Jiang, et al. · Journal of Crystal Growth · 5

Crystalline quality of Si epilayers influenced by Sb doping

1996 · Xuekun Lu, Zuimin Jiang, et al. · Journal of Crystal Growth · 5

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

1995 · Xiang-jiu Zhang, Hong-qiang Lu, et al. · Journal of Crystal Growth · 5

The influence of the edge effect of the mask on the strain and the morphology of SiGe film grown at the patterned Si substrate by molecular beam epitaxy

2006 · Hongbin Yang, Xiang-jiu Zhang, et al. · Thin Solid Films · 4

Extremely Narrow Sb Delta-Doped Epitaxial Layer Characterized by X-Ray Reflectivity

1997 · Jiang Zui-min, Xiu Li-song, et al. · Chinese Physics Letters · 3

Photoluminescence from trapped excitons in quantum well structures

1996 · Xiaohan Liu, Daming Huang, et al. · Journal of Physics Condensed Matter · 3

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An investigation on the thermal stability of the GexSi1-x⧸Si superlattice grown by MBE

1993 · Guoliang Zhou, Xiang-jiu Zhang, et al. · Journal of Crystal Growth · 3

SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect

1996 · Yong Gao, Guo-zheng Li, et al. · Chinese Physics Letters · 2

Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy

1994 · X. J. Chen, Q. H. Wang, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

MBE Growth of Highly Relaxed Si 0.45 Ge 0.55 Films with Very Low Misfit Dislocation Density on Si (001) Substrates

2006 · Lu Xiang-Dang, Zhang Xiang-Jiu, et al. · Chinese Physics Letters · 1

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

1996 · Xuekun Lu, Zuimin Jiang, et al. · Journal of Crystal Growth · 1

Ge Beam Treatment of Si Substrate for Molecular Beam Epitaxy

1993 · Qian Cui, Xuekun Lu, et al. · MRS Proceedings · 1

ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATE

1993 · WEI XING, GONG DA-WEI, et al. · Acta Physica Sinica · 1

THE GROWTH CHARACTERISTICS AND SURFACE RECONS-TRUCTION OF Ge/Si (111) AND Si/Ge(111)

1990 · CHEN KE-MING, ZHOU GUO-LIANG, et al. · Acta Physica Sinica · 1

Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness

2009 · Yang Hong-Bin, Zhang Xiang-Jiu · Chinese Physics Letters

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Works count: 37

Citation count: 176

H-index: 7

I10-index: 5