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THE GROWTH CHARACTERISTICS AND SURFACE RECONS-TRUCTION OF Ge/Si (111) AND Si/Ge(111)

Year: 1990

Type: article

Abstract: The growth characteristics and surface reconstruction of Ge/Si(lll) and Si/Ge(lll) are studied by reflection high energy electron diffraction (RHEED) and Auger electron spectros-copy (AES). The growth modes are proposed based on the results. The stain effects on the growth characteristics, interface structure and surface reconstruction are further discussed.

Source: Acta Physica Sinica

DOI: 10.7498/aps.39.599

Authors: CHEN KE-MING, ZHOU GUO-LIANG, SHENG CHI, JIANG WEI-DONG, ZHANG XIANG-JIU, (1)复旦大学表面物理实验室,上海,200433; (2)复旦大学表面物理实验室,上海,200434; (3)复旦大学表面物理实验室,上海,200435; (4)复旦大学表面物理实验室,上海,200436; (5)复旦大学表面物理实验室,上海,200437

Institution: Fudan University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2580427140

FWCI:

Cites:

Cited by: 1

Related to: 10