Work

Transmission Electron Microscopy of TiW/Ti/Pt/Au Gate Metallizations for InAs Channel High Electron Mobility Transistors

Year: 2007

Type: article

Source: Microscopy and Microanalysis

DOI: 10.1017/s1431927607078129

Authors: Q Zhang, R Dormaier, T Buehl, B Liu, S Mohney

Institution: Pennsylvania State University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2015155529

FWCI:

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