Author

Trevor E. Buehl

Observed names: T Buehl, T. E. Buehl, Trevor Buehl

Institutions: Agilent Technologies (United States), University of California, Santa Barbara, University of California, Santa Cruz, University of Delaware

Observed institutions: Pennsylvania State University, Agilent Technologies (United States), University of California, Santa Barbara, University of California, Santa Cruz, University of Delaware

OpenAlex ID: A5026520945

Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

2012 · Jeonghee Kim, Nikholas G. Toledo, et al. · IEEE Electron Device Letters · 27

Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites

2012 · Laura E. Clinger, Gilles Pernot, et al. · Journal of Applied Physics · 26

Growth and characterization of TbAs:GaAs nanocomposites

2011 · Laura E. Cassels, Trevor E. Buehl, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 22

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Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy

2010 · Trevor E. Buehl, James M. LeBeau, et al. · Journal of Crystal Growth · 15

Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs

2011 · Jason K. Kawasaki, Rainer Timm, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 8

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Thermoelectric Transport in InGaAs with High Concentration of Rare-Earth TbAs Embedded Nanoparticles

2012 · Ekaterina Selezneva, Laura E. Clinger, et al. · Journal of Electronic Materials · 6

Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation

2011 · J. Buschbeck, J. Kawasaki, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 4

Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy

2011 · Trevor E. Buehl, Christopher J. Palmstrøm, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 4

Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature

2012 · Peter G. Burke, Trevor E. Buehl, et al. · Journal of Electronic Materials · 3

Erratum to: Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature

2012 · Peter G. Burke, Trevor E. Buehl, et al. · Journal of Electronic Materials

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Integrated non-III-nitride/III-nitride tandem solar cell

2011 · Nikholas G. Toledo, Samantha C. Cruz, et al. · Conference digest

Semimetallic Nanorods Embedded in High-Index Semiconductors

2011 · Trevor E. Buehl

Scanning Tunneling Microscopy and Spectroscopy of Rare Earth-Monopnictide Nanostructures Embedded in a Semiconducting Matrix

2011 · Jason K. Kawasaki, Rainer Timm, et al.

Transmission Electron Microscopy of TiW/Ti/Pt/Au Gate Metallizations for InAs Channel High Electron Mobility Transistors