Work

Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN

Year: 2012

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2012.2225137

Authors: Jeonghee Kim, Nikholas G. Toledo, Shalini Lal, Jing Lu, Trevor E. Buehl, Umesh K. Mishra

Institutions: University of California, Santa Barbara, Intel (United States), Agilent Technologies (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2091012933

FWCI: 1.282

Cites: 12

Cited by: 27

Related to: 10