Work

Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates

Year: 2008

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2008.09.061

Authors: Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima

Institutions: University of Yamanashi, Tohoku University, Institute for Materials Research, Tohoku University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2015404369

FWCI: 0.772

Cites: 13

Cited by: 19

Related to: 10