Work

Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack

Year: 2009

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.3259407

Authors: Masaharu Kobayashi, Gaurav Thareja, Masato Ishibashi, Yun Sun, Peter Griffin, Jim McVittie, Piero Pianetta, Krishna Saraswat, Yoshio Nishi

Institutions: Stanford University, SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016184522

FWCI: 4.124

Cites: 27

Cited by: 83

Related to: 10