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Masaharu Kobayashi

Observed names: Kobayashi Masaharu, Kobayashi, Masaharu, M Kobayashi, M. Kobayashi, MASAHARU KOBAYASHI, Masaharu KOBAYASHI, Μ. Kobayashi, 小林 正治, 小林正治, 正治 小林
Observed institutions: Panasonic (Japan), IBM (United States), National Yang Ming Chiao Tung University, National Taiwan University, IBM Research - Thomas J. Watson Research Center, IMEC, Stanford SystemX Alliance, Systems Design Lab, Graduate School of Engineering, The University of Tokyo, Institute of Industrial Science, The University of Tokyo, Hitachi (Japan), The University of Tokyo, Nara Institute of Science and Technology, Stanford University
ORCID: 0000-0002-7945-6136
Observed ORCID: 0000-0002-7945-6136
OpenAlex ID: A5071031997
Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
2009 · Masaharu Kobayashi, Atsuhiro Kinoshita, et al. · Journal of Applied Physics · 206
Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application
2020 · Fei Mo, Yusaku Tagawa, et al. · IEEE Journal of the Electron Devices Society · 152
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Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process
2018 · Masaharu Kobayashi, Yusaku Tagawa, et al. · IEEE Journal of the Electron Devices Society · 130
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Negative Capacitance for Boosting Tunnel FET performance
2017 · Masaharu Kobayashi, Kyungmin Jang, et al. · IEEE Transactions on Nanotechnology · 123
On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film
2016 · Masaharu Kobayashi, Toshiro Hiramoto · AIP Advances · 114
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Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface
2010 · Zihong Liu, Masaharu Kobayashi, et al. · Physical Review B · 89
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
2014 · N. Daix, E. Uccelli, et al. · APL Materials · 85
Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO2
2016 · Masaharu Kobayashi, Nozomu Ueyama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 84
Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack
2009 · Masaharu Kobayashi, Gaurav Thareja, et al. · Journal of Applied Physics · 83
Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application
2019 · Fei Mo, Yusaku Tagawa, et al. · Symposium on VLSI Technology · 82
A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor
2018 · Masaharu Kobayashi · Applied Physics Express · 77
Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors
2008 · Masaharu Kobayashi, Toshiro Hiramoto · Journal of Applied Physics · 74
A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide
2022 · Zhuo Li, Jixuan Wu, et al. · IEEE Electron Device Letters · 66
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Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs
2012 · H. Miki, N. Tega, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 65
Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics
2022 · Masaharu Kobayashi, Jixuan Wu, et al. · Nano Convergence · 63
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p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si
2009 · Hyun-Yong Yu, M. Ishibashi, et al. · IEEE Electron Device Letters · 57
High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
2008 · Jia Feng, Gaurav Thareja, et al. · IEEE Electron Device Letters · 57
Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO2
2017 · 正治 小林, 望 上山, et al. · IEICE Technical Report; IEICE Tech. Rep. · 54
Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application
2021 · Jixuan Wu, Fei Mo, et al. · IEEE Transactions on Electron Devices · 49
Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning
2011 · Aneesh Nainani, Yun Sun, et al. · Journal of Applied Physics · 49
Device design guideline for steep slope ferroelectric FET using negative capacitance in sub-0.2V operation: Operation speed, material requirement and energy efficiency
2015 · Masaharu Kobayashi, Toshiro Hiramoto · Symposium on VLSI Technology · 48
Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As
2008 · M. Kobayashi, P. T. Chen, et al. · Applied Physics Letters · 48
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A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process
2020 · Jixuan Wu, Fei Mo, et al. · Applied Physics Letters · 46
Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application
2020 · Fei Mo, Takuya Saraya, et al. · Applied Physics Express · 45
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Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2
2017 · Kyungmin Jang, Takuya Saraya, et al. · Solid-State Electronics · 45
Works count: 396
Citation count: 3,601
H-index: 33
I10-index: 82
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