Work

High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts

Year: 2008

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2008.2000613

Authors: Jia Feng, Gaurav Thareja, Masaharu Kobayashi, Shulu Chen, Andrew Poon, Yun Bai, Peter B. Griffin, Simon S. Wong, Yoshio Nishi, James D. Plummer

Institution: Stanford University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2152244140

FWCI: 3.499

Cites: 14

Cited by: 57

Related to: 10