Work

Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x-ray diffraction

Year: 1993

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.354587

Authors: B. Dietrich, E. Bugiel, J. Klatt, G. Lippert, T. Morgenstern, H. J. Osten, P. Zaumseil

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016398384

FWCI: 5.741

Cites: 7

Cited by: 71

Related to: 10