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Jeffrey Klatt

Observed names: J. K. Klatt, J. Klatt, J. L. Klatt, J.J. Klatt, J.L. Klatt
OpenAlex ID: A5111664475
Surfactant-controlled solid phase epitaxy of germanium on silicon
1992 · H. J. Osten, J. Klatt, et al. · Physical Review Letters · 87
Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x-ray diffraction
1993 · B. Dietrich, E. Bugiel, et al. · Journal of Applied Physics · 71
Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te
1993 · H. J. Osten, J. Klatt, et al. · Journal of Applied Physics · 58
In situ monitoring of strain relaxation during antimony-mediated growth of Ge and Ge1−y Cy layers on Si(001) using reflection high energy electron diffraction
1994 · H. J. Osten, J. Klatt · Applied Physics Letters · 49
The influence of surfactants on growth modes in molecular-beam epitaxy: The growth of germanium layers on Si(100)
1992 · H. J. Osten, G. Lippert, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 49
Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant
1992 · H. J. Osten, J. Klatt, et al. · Applied Physics Letters · 43
Ion beam mixing in Ag-Pd alloys
1989 · J. L. Klatt, R. S. Averback, et al. · Applied Physics Letters · 38
Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation
1989 · R. P. Bryan, J. J. Coleman, et al. · Applied Physics Letters · 37
Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on Si(100)
1992 · H. J. Osten, E. Bugiel, et al. · Applied Physics Letters · 34
Surfactant-mediated growth of germanium on Si(100) by MBE and SPE
1993 · H.J. Osten, J. Klatt, et al. · Journal of Crystal Growth · 21
Interfacial damage in ion-irradiated GaAs/AlAs superlattices
1993 · J. L. Klatt, R. S. Averback, et al. · Physical review. B, Condensed matter · 19
Temperature dependence of ion-beam mixing in III–V semiconductors
1995 · D. V. Forbes, J. J. Coleman, et al. · Journal of Applied Physics · 14
Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations
1995 · H.P. Zeindl, S. Nilsson, et al. · Journal of Crystal Growth · 13
Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs
1993 · J. L. Klatt, R. S. Averback, et al. · Applied Physics Letters · 13
Compositional disordering and the formation of semi-insulating layers in AlAs-GaAs superlattices by MeV oxygen implantation
1989 · R. P. Bryan, M. E. Givens, et al. · Journal of Electronic Materials · 13
Boron-controlled solid phase epitaxy of germanium on silicon: A new nonsegregating surfactant
1994 · J. Klatt, D. Krüger, et al. · Applied Physics Letters · 12
Van der Waals epitaxy of thick Sb, Ge, and Ge/Sb films on mica
1992 · H. J. Osten, J. Klatt, et al. · Applied Physics Letters · 12
Temperature dependence of compositional disordering of GaAs-AlAs superlattices during MeV Kr irradiation
1990 · R. P. Bryan, L. M. Miller, et al. · Physical review. B, Condensed matter · 9
The growth of nanometer Si/SiGe/Si quantum well wires with local molecular beam epitaxy in dependence on the shadow mask geometry
1996 · Myeongcheol Kim, H.J. Osten, et al. · Journal of Crystal Growth · 5
Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces
1991 · J. L. Klatt, J. Alwan, et al. · MRS Proceedings · 5
Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation
1991 · J. J. Alwan, J. Honig, et al. · Applied Physics Letters · 3
Influence of interdiffusion and surfactants on Si/SiGe heterointerfaces
1996 · H.P. Zeindl, S. Nilsson, et al. · Applied Surface Science · 2
Semiconductor Film Stack Interface Investigation via DSIMS & TOFSIMS Depth Profiling and HAXPES : Yield Enhancement/Learning
2023 · Thanas Budri, Jeffrey Klatt, et al. · ASMC proceedings · 1
D & TOF‐SIMS failure analysis of P‐buried layer from BiCMOS transistors
2010 · Thanas Budri, Akshey Sehgal, et al. · Surface and Interface Analysis · 1
Developing a High Volume Manufacturing Wet Clean Process to Remove BF2 Implant Induced Molybdenum Contamination
2009 · Akshey Sehgal, Hsin Hsiung Huang, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1
Works count: 41
Citation count: 617
H-index: 13
I10-index: 17
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