Work

Surface control of light‐emitting structures based on III‐nitrides

Year: 2005

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.200460340

Authors: A. I. Besyulkin, A. P. Kartashova, A. G. Kolmakov, V. V. Krivolapchuk, W. V. Lundin, M. M. Mezdrogina, A. V. Sakharov, N. M. Shmidt, A. A. Sitnikova, A. L. Zakgeim, E. E. Zavarin, R. V. Zolotareva

Institutions: Ioffe Institute, Baikov Institute of Metallurgy and Materials Science, Institute of Metallurgy

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2016812652

FWCI: 1.026

Cites:

Cited by: 10

Related to: 10