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А. Л. Закгейм

Observed names: A L Zakgeim, A. L. Zakgeim, A. L. Zakheim, A. Zakgeim, A. Zakheim, A.L. Zakgeim, A.L. Zakheim, A.L.Zakgeim, Aleksander L. Zakgeim, Zakgeim A. L., Zakgeim A.L., А Л Закгейм, А.Л. Закгейм, Закгейм, А.Л., Закгейм, Александр Львович
OpenAlex ID: A5113832333
Band-edge luminescence in quaternary AlInGaN light-emitting diodes
2001 · M. Shatalov, A. Chitnis, et al. · Applied Physics Letters · 46
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
2010 · W.V. Lundin, A.E. Nikolaev, et al. · Journal of Crystal Growth · 37
Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high‐power flip‐chip LEDs
2013 · A. E. Chernyakov, K. A. Bulashevich, et al. · physica status solidi (a) · 34
A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy
2010 · A. L. Zakgeim, G. L. Kuryshev, et al. · Semiconductors · 22
Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs
2005 · V. K. Malyutenko, O. Y. Malyutenko, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 15
Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs
2012 · A. L. Zakheim, M. E. Levinshtein, et al. · Semiconductors · 14
A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
2010 · A. F. Tsatsulnikov, W. V. Lundin, et al. · Semiconductors · 14
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
2017 · A. L. Zakgeim, N. D. Il’inskaya, et al. · Semiconductors · 13
Failure mechanisms in blue InGaN/GaN LEDs for high power operation
2012 · A.E. Chernyakov, M.E. Levinshtein, et al. · Microelectronics Reliability · 12
Surface control of light‐emitting structures based on III‐nitrides
2005 · A. I. Besyulkin, A. P. Kartashova, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 10
Thermal resistanse and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes
2015 · A.V. Aladov, K.A. Bulashevich, et al. · St Petersburg Polytechnical University Journal Physics and Mathematics · 9
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High-power flip-chip blue light-emitting diodes based on AlGaInN
2005 · D. A. Zakheim, I. P. Smirnova, et al. · Semiconductors · 9
InGaN/GaN short‐period superlattices: synthesis, properties, applications
2011 · A. F. Tsatsulnikov, W. V. Lundin, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 7
High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
2010 · W. V. Lundin, A. E. Nikolaev, et al. · Technical Physics Letters · 7
Degradation of blue LEDs related to structural disorder
2006 · A. V. Kamanin, A. G. Kolmakov, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 7
Fabrication of high‐power flip‐chip blue and white LEDs operating under high current density
2004 · D. A. Zakheim, I. P. Smirnova, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 7
Features of Operation of High-Power AlInGaN LEDs at High Pulse Currents
2021 · A. L. Zakgeim, A. E. Ivanov, et al. · Technical Physics Letters · 6
Infrared micro-thermography of high-power AlInGaN LEDs using high emissivity (black) in IR and transparent in the visible spectral region coating
2019 · A. Aladov, A. Chernyakov, et al. · Quantitative InfraRed Thermography Journal · 6
Localized states in the active region of blue LEDs related to a system of extended defects
2007 · D. V. Davydov, A. L. Zakgeim, et al. · Technical Physics Letters · 6
Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs
2011 · A. F. Tsatsulnikov, W. V. Lundin, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5
Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
2011 · B. Ya. Ber, E. V. Bogdanova, et al. · Semiconductors · 5
Comparative study of quantum efficiency of blue LED with different nanostructural arrangement
2007 · A. A. Greshnov, A. E. Chernyakov, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5
The limiting energy capabilities of high-power AlInGaN LEDs
2022 · Zakgeim A.L., Aladov A.V., et al. · Письма в журнал технической физики · 4
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Research perspectives of the influence of lighting modes on changes of human functional state by means of “smart lighting”
2015 · D.N. Berlov, T.I. Baranova, et al. · IEEE International Conference on Environment and Electrical Engineering and IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe) · 4
Theoretical and experimental study of thermal management in high-power AlInGaN LEDs
2014 · A.E. Chernyakov, A.L. Zakgeim, et al. · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · 4
Works count: 81
Citation count: 357
H-index: 10
I10-index: 10
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