Work

High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range

Year: 2010

Type: article

Source: Technical Physics Letters

DOI: 10.1134/s1063785010110283

Authors: W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, S. O. Usov, V. S. Sizov, A. L. Zakgeim, A. E. Chernyakov, A. F. Tsatsul’nikov

Institutions: Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center, Ioffe Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2053861997

FWCI: 0.237

Cites: 4

Cited by: 7

Related to: 10