Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy
Year: 2007
Type: article
Abstract: The effect of the Schottky barrier height on the detection of the concentration of midgap defects using deep level transient spectroscopy (DLTS) is experimentally and theoretically studied for EH6 and EH7 defects in 4H-SiC. In this special case, the DLTS signal height for EH6 and EH7 increases with increasing barrier height and saturates at values above 1.5 and 1.7eV, respectively. Below 1.1eV, the DLTS peak completely disappears for both defects. The experimental data are explained by a theoretical model. The course of the quasi-Fermi level in the space charge region is calculated as a function of the reverse current through it, which is determined by the barrier height, and the reverse bias applied.
Source: Journal of Applied Physics
DOI: 10.1063/1.2818050
Authors: S. A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki, T. Ohshima, H. Itoh, Fei Yan, R. P. Devaty, W. J. Choyke
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: Universitetet i Oslo
OpenAlex ID: W2017379457