Work

Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Year: 1999

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.371396

Authors: I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck, U. K. Mishra

Institution: University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, University of California, Santa Barbara, Multidisciplinary University Research Initiative, Office of Naval Research, Air Force Office of Scientific Research

OpenAlex ID: W2017534859

FWCI: 18.21

Cites: 25

Cited by: 457

Related to: 10