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Rama Vetury

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2001 · R. Vetury, N.Q. Zhang, et al. · IEEE Transactions on Electron Devices · 1,499
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
1999 · I. P. Smorchkova, C. R. Elsass, et al. · Journal of Applied Physics · 457
Anisotropic epitaxial lateral growth in GaN selective area epitaxy
1997 · D. Kapolnek, S. Keller, et al. · Applied Physics Letters · 305
Current instabilities in GaN-based devices
2001 · I. Daumiller, D. Theron, et al. · IEEE Electron Device Letters · 157
Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers
2010 · Z.-Q. Fang, B. Claflin, et al. · Journal of Applied Physics · 124
Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs
2006 · R.J. Trew, Yueying Liu, et al. · IEEE Transactions on Microwave Theory and Techniques · 97
Periodically poled aluminum scandium nitride bulk acoustic wave resonators and filters for communications in the 6G era
2025 · Izhar, M. M. A. Fiagbenu, et al. · Microsystems & Nanoengineering · 54
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452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon
2019 · Y. Shen, P. Patel, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 43
Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability
2004 · D.S. Green, S.R. Gibb, et al. · Journal of Crystal Growth · 43
High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications
2005 · R. Vetury, Y. Wei, et al. · IEEE MTT-S International Microwave Symposium digest · 41
GaN HEMT thermal behavior and implications for reliability testing and analysis
2008 · Daniel S. Green, Bharath Vembu, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 34
Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization
2000 · R. Vetury, I.P. Smorchkova, et al. · MRS Proceedings · 30
Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors
2002 · R. Vetury, Y.-F. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 29
100 W GaN HEMT power amplifier module with > 60% efficiency over 100–1000 MHz bandwidth
2010 · K. Krishnamurthy, T. Driver, et al. · IEEE MTT-S International Microwave Symposium digest · 28
Wideband 400 W pulsed power GaN HEMT amplifiers
2008 · K. Krishnamurthy, J. Martin, et al. · IEEE MTT-S International Microwave Symposium digest · 28
X-band Bulk Acoustic Wave Resonator (XBAW) using Periodically Polarized Piezoelectric Films (P3F)
2023 · A. Kochhar, R. Vetury, et al. · IEEE International Ultrasonics Symposium · 27
Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
2001 · S. Keller, R. Vetury, et al. · Applied Physics Letters · 21
Single crystal aluminum nitride film bulk acoustic resonators
2016 · James B. Shealy, Jeffrey B. Shealy, et al. · IEEE Radio and Wireless Symposium (RWS) · 20
Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters
2011 · Eric R. Heller, Rama Vetury, et al. · IEEE Transactions on Electron Devices · 20
Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs)
2014 · Jason P. Jones, Matthew R. Rosenberger, et al. · I-THERM :/I-THERM - Intersociety Conference on Thermal Phenomena in Electronic Systems · 18
Reliability testing of AlGaN/GaN HEMTs under multiple stressors
2011 · Bradley D. Christiansen, Ronald A. Coutu, et al. · IEEE International Reliability Physics Symposium proceedings · 16
RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's
2006 · R.J. Trew, Y. Liu, et al. · IEEE MTT-S International Microwave Symposium digest · 16
Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures
2006 · R. Vetury, J.B. Shealy, et al. · IEEE MTT-S International Microwave Symposium digest · 16
A 250W S-Band GaN HEMT Amplifier
2007 · K Krishnamurthy, M. J. Poulton, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 15
0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology
2009 · K. Krishnamurthy, D. Green, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 13
Works count: 50
Citation count: 3,244
H-index: 19
I10-index: 28
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