Year: 1998
Type: article
Abstract: The use of extreme ultraviolet radiation (13.4nm) for microlithography requires a thin layer imaging resist technology due to the strongly absorbing nature of 13.4nm radiation. In any thin layer imaging technique, the aerial image from the exposure system is transferred into a top imaging layer of photoresist and is used to form an in-situ mask for pattern transfering the image through the remaining resist thickness to the device layer in a separate etch development step. The work presented here takes advantage of a new aminodisilane silylation reagent to make improvements in the thin layer imaging process known as top surface imaging. This silylation process is capable of 100nm resolution using extreme ultraviolet exposure at 13.4 nm and the new aminodisilane reagent.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2017559628