Work

Thin-oxide degradation along feature edges during reactive ion etching of polysilicon gates

Year: 1994

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/1.579318

Authors: K. Markus, C. M. Osburn, P. Magill, S. M. Bobbio

Institutions: MCNC Research and Development Institute, North Carolina State University, University of North Carolina at Charlotte

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2017700336

FWCI: 0.959

Cites:

Cited by: 4

Related to: 10