Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates
Year: 2003
Type: article
Source: Journal of Crystal Growth
Authors: Johji Nishio, Mitsuru Hasegawa, Kazutoshi Kojima, Toshiyuki Ohno, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2017940164