Work

Fabrication of thick SiGe on insulator (Si0.2Ge0.8OI) by condensation of SiGe∕Si superlattice grown on silicon on insulator

Year: 2007

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2737818

Authors: S. Balakumar, S. Peng, K. M. Hoe, G. Q. Lo, R. Kumar, N. Balasubramanian, D. L. Kwong, Y. L. Foo, S. Tripathy

Institutions: Singapore Science Park, Institute of Microelectronics, Institute of Materials Research and Engineering

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018341597

FWCI: 2.081

Cites: 7

Cited by: 12

Related to: 10