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Keat Mun Hoe

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance
2006 · N. Singh, F. Y. Lim, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 165
Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon–Carbon Source/Drain
2008 · Rinus T. P. Lee, Li-Tao Yang, et al. · IEEE Electron Device Letters · 47
Three Dimensionally Stacked SiGe Nanowire Array and Gate-All-Around p-MOSFETs
2006 · L. K. Bera, H. S. Nguyen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 44
Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique
2008 · Y. Jiang, N. Singh, et al. · IEEE Electron Device Letters · 32
Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors
2007 · Kian-Ming Tan, Tsung-Yang Liow, et al. · IEEE Electron Device Letters · 30
Demonstration of Schottky Barrier NMOS Transistors With Erbium Silicided Source/Drain and Silicon Nanowire Channel
2008 · Eu Jin Tan, Kin-Leong Pey, et al. · IEEE Electron Device Letters · 26
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SiGeO layer formation mechanism at the SiGe/oxide interfaces during Ge condensation
2007 · S. Balakumar, Suo Peng, et al. · Applied Physics Letters · 24
A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET
2008 · Kian-Ming Tan, Ming Zhu, et al. · IEEE Electron Device Letters · 17
A New Liner Stressor with Very High Intrinsic Stress (≫ 6 GPa) and Low Permittivity Comprising Diamond-Like Carbon (DLC) for Strained P-Channel Transistors
2007 · Kian-Ming Tan, Ming Zhu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Fabrication of thick SiGe on insulator (Si0.2Ge0.8OI) by condensation of SiGe∕Si superlattice grown on silicon on insulator
2007 · S. Balakumar, S. Peng, et al. · Applied Physics Letters · 12
Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs
2007 · Rinus T. P. Lee, Tsung-Yang Liow, et al. · Symposium on VLSI Technology · 10
Fabrication of Thick Germanium-on-Insulator (GeOI) Substrates
2008 · S. Balakumar, K.M. Hoe, et al. · Journal of Electronic Materials · 8
Silicon-Germanium-Tin (SiGeSn) Source and Drain Stressors formed by Sn Implant and Laser Annealing for Strained Silicon-Germanium Channel P-MOSFETs
2007 · Grace Huiqi Wang, Eng-Huat Toh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner
2006 · Grace Huiqi Wang, Eng-Huat Toh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap
2007 · R. Yang, Y. Z. Xiong, et al. · Applied Physics Letters · 4
Materials and Electrical Characterization of Er(Si[sub 1−x]Ge[sub x])[sub 2−y] Films Formed on Si[sub 1−x]Ge[sub x](001) (x=0–0.3) via Rapid Thermal Annealing
2007 · E. J. Tan, K. L. Pey, et al. · Journal of The Electrochemical Society · 2
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Silicon Nanowire Schottky Barrier NMOS Transistors
2007 · E.J. Tan, K.L. Pey, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2
Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology
2006 · R. Yang, W.Y. Loh, et al. · IEEE Electron Device Letters · 2
Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
2007 · Tsung-Yang Liow, Kian-Ming Tan, et al. · European Solid-State Device Research Conference · 1
Contact Technology employing Nickel-Platinum Germanosilicide Alloys for P-Channel FinFETs with Silicon-Germanium Source and Drain Stressors
2007 · Rinus Tek-Po Lee, Kian-Ming Tan, et al. · International Conference on Solid State Devices and Materials (SSDM)
Novel Extended-Pi Shaped Silicon-Germanium (eΠ-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs
2007 · Kian-Ming Tan, Tsung-Yang Liow, et al. · International Conference on Solid State Devices and Materials (SSDM)
A Novel Approach to Fabricate ～120 nm Thick Fully Relaxed Ge-on-Insulator
2007 · S. Balakumar, K.M. Hoe, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 22
Citation count: 453
H-index: 10
I10-index: 11
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