Work

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

Year: 2006

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2006.882567

Authors: R. Yang, W.Y. Loh, M.B. Yu, Y.-Z. Xiong, S.F. Choy, Y. Jiang, D.S.H. Chan, Y.F. Lim, L.K. Bera, L.Y. Wong, W.H. Li, A.Y. Du, C.H. Tung, K.M. Hoe, G.Q. Lo, N. Balasubramanian, D.-L. Kwong

Institutions: Institute of Microelectronics, National University of Singapore

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Institute of Microelectronics of the Chinese Academy of Sciences

OpenAlex ID: W2136435995

FWCI: 0.182

Cites: 19

Cited by: 2

Related to: 10