Author

Anyan Du

Observed names: A. Du, A. Y. Du, A.-Y. Du, A.Y. Du, An-yan DU, AnYan Du

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, Institute of Microbiology, University of Chinese Academy of Sciences, Zhejiang University

Observed institutions: Agency for Science, Technology and Research, National University of Singapore, Chinese Academy of Sciences, Singapore Science Park, Institute of Microelectronics, Institute of Microelectronics, Institute of Microbiology, GlobalFoundries (Singapore), Jusung Engineering (South Korea), University of Chinese Academy of Sciences, Zhejiang University

OpenAlex ID: A5114066368

Phase change random access memory cell with superlattice-like structure

2006 · T. C. Chong, L. P. Shi, et al. · Applied Physics Letters · 246

N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide

2004 · S. Zhu, J. Chen, et al. · IEEE Electron Device Letters · 209

Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

2005 · Kah-Wee Ang, King-Jien Chui, et al. · Applied Physics Letters · 117

A TaN– $hbox HfO_2$ –Ge pMOSFET With Novel $hbox SiH_4$ Surface Passivation

2004 · N. Wu, Q. Zhang, et al. · IEEE Electron Device Letters · 111

Schottky-Barrier S/D MOSFETs With High- $Kappa$ Gate Dielectrics and Metal-Gate Electrode

2004 · S. Zhu, H.Y. Yu, et al. · IEEE Electron Device Letters · 106

Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate

2005 · Shiyang Zhu, Rui Li, et al. · IEEE Electron Device Letters · 97

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

2003 · H.Y. Yu, H.F. Lim, et al. · IEEE Electron Device Letters · 79

Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions

2005 · Kah Wee Ang, King Jien Chui, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 74

Crystalline Amorphous Semiconductor Superlattice

2008 · T. C. Chong, L. P. Shi, et al. · Physical Review Letters · 69

Evidence and Understanding of ALD $hbox HfO_2hbox --hbox Al_2hbox O_3$ Laminate MIM Capacitors Outperforming Sandwich Counterparts

2004 · S.-J. Ding, H. Hu, et al. · IEEE Electron Device Letters · 40

Strained N-Channel FinFETs with 25 nm Gate Length and Silicon-Carbon Source/Drain Regions for Performance Enhancement

2006 · T.-Y. Liow, K.-M. Tan, et al. · Symposium on VLSI Technology · 34

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

2004 · Shiyang Zhu, H.Y. Yu, et al. · Solid-State Electronics · 34

Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures

2005 · Tsung-Yang Liow, Kian-Ming Tan, et al. · Applied Physics Letters · 28

Joining Copper Oxide Nanotube Arrays Driven by the Nanoscale Kirkendall Effect

2013 · Shu Rong Chun, Wardhana Aji Sasangka, et al. · Small · 27

Mobility Enhancement in TaN Metal-Gate MOSFETs Using Tantalum Incorporated HfO $_2$ Gate Dielectric

2004 · X. Yu, C. Zhu, et al. · IEEE Electron Device Letters · 22

Zinc-Blende Structure of CrTe Epilayers Grown on GaAs

2006 · M.G. Sreenivasan, K.L. Teo, et al. · IEEE Transactions on Magnetics · 19

High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

2004 · Xiongfei Yu, Chunxiang Zhu, et al. · Symposium on VLSI Technology · 19

Ge diffusion and solid phase epitaxy growth to form Si1−xGex/Si and Ge on insulator structure

2005 · Fei Gao, S.J. Lee, et al. · Thin Solid Films · 18

Correlation of structural and magnetic properties of ferromagnetic Mn-implanted Si1−xGex films

2008 · V. Ko, K. L. Teo, et al. · Journal of Applied Physics · 17

Effects of InxGa1−xAs matrix layer on InAs quantum dot formation and their emission wavelength

2006 · Zongyou Yin, Xiaohong Tang, et al. · Journal of Applied Physics · 17

Structural, magnetic, and transport investigations of CrTe clustering effect in (Zn,Cr)Te system

2007 · M. G. Sreenivasan, K. L. Teo, et al. · Journal of Applied Physics · 15

50 nm Silicon-On-Insulator N-MOSFET Featuring Multiple Stressors: Silicon-Carbon Source/Drain Regions and Tensile Stress Silicon Nitride Liner

2006 · K.-W. Ang, K.-J. Chui, et al. · Symposium on VLSI Technology · 15

Thermally robust high quality HfN/HfO/sub 2/ gate stack for advanced CMOS devices

2004 · H.Y. Yu, J.F. Kang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15

Development of plasma etching process for sub-50 nm TaN gate

2005 · Vladimir Bliznetsov, Rakesh Kumar, et al. · Thin Solid Films · 13

Delamination-induced dielectric breakdown in Cu/low-k interconnects

2008 · T.L. Tan, C.L. Gan, et al. · Journal of materials research/Pratt's guide to venture capital sources · 12

Works count: 67

Citation count: 1,588

H-index: 18

I10-index: 28