Work

Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate

Year: 2005

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2004.841462

Authors: Shiyang Zhu, Rui Li, S.J. Lee, M.F. Li, A. Du, J. Singh, Chunxiang Zhu, A. Chin, D.L. Kwong

Institutions: National University of Singapore, Fudan University, Institute of Microelectronics, National Yang Ming Chiao Tung University, The University of Texas at Austin

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2149915917

FWCI: 10.45

Cites: 16

Cited by: 97

Related to: 10