Work

High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric

Year: 2004

Type: conference-paper

Source: Symposium on VLSI Technology

DOI: 10.1109/vlsit.2004.1345422

Authors: Xiongfei Yu, Chunxiang Zhu, X.P. Wang, M.F. Li, A. Chin, A.Y. Du, W.D. Wang, Dim-Lee Kwong

Institutions: National University of Singapore, National Yang Ming Chiao Tung University, Institute of Microelectronics, Institute of Materials Research and Engineering, The University of Texas at Austin

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2009196253

FWCI: 5.398

Cites:

Cited by: 19

Related to: 10