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Author

Xiongfei Yu

Observed institution: National University of Singapore
OpenAlex ID: A5102199715
A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics
2003 · Xiongfei Yu, Chunxiang Zhu, et al. · IEEE Electron Device Letters · 147
MIM capacitors using atomic-layer-deposited high-/spl kappa/ (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ dielectrics
2003 · Hang Hu, Chunxiang Zhu, et al. · IEEE Electron Device Letters · 73
RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications
2004 · Shi-Jin Ding, Hang Hu, et al. · IEEE Transactions on Electron Devices · 72
PVD HfO2 for high-precision MIM capacitor applications
2003 · Sun Jung Kim, Byung Jin Cho, et al. · IEEE Electron Device Letters · 58
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
2004 · Xiongfei Yu, Chunxiang Zhu, et al. · Applied Physics Letters · 47
Voltage and temperature dependence of capacitance of high-k HfO/sub 2/ MIM capacitors: a unified understanding and prediction
2004 · Chunxiang Zhu, Hang Hu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 29
High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric
2004 · Xiongfei Yu, Chunxiang Zhu, et al. · Symposium on VLSI Technology · 19
Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability
2007 · Xiongfei Yu, Chunxiang Zhu, et al. · Applied Physics Letters · 14
Advanced HfTaON/SiO/sub 2/ gate stack with high mobility and low leakage current for low-standby-power application
2006 · Xiongfei Yu, Mingbin Yu, et al. · IEEE Electron Device Letters · 12
Advanced MOSFETs using HfTaON/SiO/sub 2/ gate dielectric and TaN metal gate with excellent performances for low standby power application
2006 · Xiongfei Yu, Chunxiang Zhu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
A Comparative Study of and Gate Stacks With TaN Metal Gate for Advanced CMOS Applications
2007 · Xiongfei Yu, Mingbin Yu, et al. · IEEE Transactions on Electron Devices · 9
Effect of Gate Dopant Diffusion on Leakage Current in $ \hbox{n}^{+}\hbox{Poly-Si}/\hbox{HfO}_{2}$ and Examination of Leakage Paths by Conducting Atomic Force Microscopy
2007 · Xiongfei Yu, Jidong Huang, et al. · IEEE Electron Device Letters · 8
Effective suppression of Fermi level pinning in polycrystalline-silicon/high-k gate stack by using polycrystalline-silicon-germanium gate electrode
2006 · Xiongfei Yu, Chunxiang Zhu, et al. · Applied Physics Letters · 4
Mim Capacitors with HfO2 and HfAlOx for Si RF and Analog Applications
2003 · Xiongfei Yu, Chunxiang Zhu, et al. · MRS Proceedings · 3
The Role of Nitrogen on Charge-Trapping-Induced $V_{\rm th}$ Instability in HfAlON High-$\kappa$ Gate Dielectric With Metal and Poly-Si Gate Electrodes
2007 · Xiongfei Yu, Mingbin Yu, et al. · IEEE Transactions on Electron Devices · 1
Effective suppression of fermi level pinning in poly-Si/HfO/sub 2/ gate stack by using poly-SiGe gate
2006 · Xiongfei Yu, Mingbin Yu, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
Improved crystallization temperature and interfacial properties of HfO/sub 2/ gate dielectrics by adding Ta/sub 2/O/sub 5/ with TaN metal gate
2004 · Xiongfei Yu, Chunxiang Zhu, et al. · International Semiconductor Device Research Symposium
Works count: 18
Citation count: 507
H-index: 10
I10-index: 10
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