Work

Improved crystallization temperature and interfacial properties of HfO/sub 2/ gate dielectrics by adding Ta/sub 2/O/sub 5/ with TaN metal gate

Year: 2004

Type: conference-paper

Source: International Semiconductor Device Research Symposium

DOI: 10.1109/isdrs.2003.1271996

Authors: Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, Nan Wu, Hang Hu, A. Chin, M.F. Li, D.S.H. Chan, W.D. Wang, Dim-Lee Kwong

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1585178262

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