Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability
Year: 2007
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2709948
Authors: Xiongfei Yu, Chunxiang Zhu, Mingbin Yu
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2092985641