Influence of Buffer Layers and Barrier Metals on Properties of (Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition
Year: 1997
Type: article
Abstract: The characteristics, especially the electrical properties, of (Ba, Sr)TiO3 [BST] films obtained by a two-step process of liquid source chemical vapor deposition (CVD) on two types of substrates or Ru/Si and Ru/TiN/Ti/Si structures have been investigated. First, the studies on the best deposition conditions for BST buffer layers on Ru/Si substrates indicated that more crystallized buffer layers improved the electrical properties of the two-step-deposited BST films. The reproducibility of the measured thicknesses was 1.5% (1σ) and that for t eq-values of equivalent SiO2 thicknesses was 5.4% (1σ) for seven consecutive two-step runs on Ru/Si substrates. Moreover, the insertion of the barrier metals TiN/Ti between Ru and Si, which was stable enough for back-end processing at high temperatures, increased the degree of some crystal orientations of BST and Ru films; however, it hardly changed the electrical properties of the BST films deposited in two-steps.
DOI: 10.1143/jjap.36.5874
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2018995750