Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)
Year: 1998
Type: conference-paper
DOI: 10.1117/12.304505
Authors: Serguei An, W. R. Clark, M. Jamal Deen, Anthony S. Vetter, M. Svilans
Institutions: Nortel (Canada), Simon Fraser University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2019012987
