Year: 1991
Type: article
Abstract: Room-temperature cw operation of an InGaAs/InGaAsP multiple quantum well (MQW) laser diode on a Si substrate is reported. The MQW laser emits at 1.54-µm wavelength and exhibits no degradation after over 1,000 hours of operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor mixing epitaxy method and a layer structure for improving crystalline quality, high-quality MQW were obtained. The stable longitudinal mode spectrum demonstrates the effectiveness of the MQW active layer and results in low-intensity noise. Annealing phenomena under cw operation are also discussed.
DOI: 10.1143/jjap.30.3876
Authors: Mitsuru Sugo, Hidefumi Mori, Yoshio Itoh, Yoshihisa Sakai Yoshihisa Sakai, Masami Tachikawa Masami Tachikawa
Institution: NTT (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2019095461