Author

Mitsuru Sugo

Observed names: M. SUGO, M. Sugo, Mitsuru SUGO, Mitsuru Sugo Mitsuru Sugo

Institution: NTT (Japan)

Observed institutions: Hokkaido University, NTT (Japan)

OpenAlex ID: A5111738576

Defect reduction effects in GaAs on Si substrates by thermal annealing

1988 · Masafumi Yamaguchi, Akio Yamamoto, et al. · Applied Physics Letters · 199

Analysis of strained-layer superlattice effects on dislocation density reduction in GaAs on Si substrates

1989 · Masafumi Yamaguchi, Takashi Nishioka, et al. · Applied Physics Letters · 118

Thermal annealing effects of defect reduction in GaAs on Si substrates

1990 · Masafumi Yamaguchi, Masami Tachikawa, et al. · Journal of Applied Physics · 97

Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained-layer superlattices

1989 · Masafumi Yamaguchi, Mitsuru Sugo, et al. · Applied Physics Letters · 93

Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrate

1992 · M. Sugo, H. Mori, et al. · Applied Physics Letters · 92

Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates

1990 · Masafumi Yamaguchi, Masami Tachikawa, et al. · Applied Physics Letters · 81

Heteroepitaxial growth and characterization of InP on Si substrates

1990 · Mitsuru Sugo, Yoshifumi Takanashi, et al. · Journal of Applied Physics · 78

Residual strains in heteroepitaxial III-V semiconductor films on Si(100) substrates

1989 · Mitsuru Sugo, Naoto Uchida, et al. · Journal of Applied Physics · 64

Room-temperature operation of an InGaAsP double-heterostructure laser emitting at 1.55 μm on a Si substrate

1990 · Mitsuru Sugo, Hidefumi Mori, et al. · Applied Physics Letters · 61

Strained InGaAs quantum disk laser with nanoscaleactive regionfabricated with self-organisation on GaAs (311)B substrate

1995 · J. Temmyo, E. Kuramochi, et al. · Electronics Letters · 51

Design of high-power strained InGaAs/AlGaAs quantum-welllasers with a vertical divergence angle of 18°

1995 · J. Temmyo, M. Sugo · Electronics Letters · 48

Scalability of spectrum-sliced DWDM transmission and its expansion using forward error correction

2006 · S. Kaneko, Jun-ichi Kani, et al. · Journal of Lightwave Technology · 43

Buffer layer effects on residual stress in InP on Si substrates

1989 · Mitsuru Sugo, Masafumi Yamaguchi · Applied Physics Letters · 31

GaAs heteroepitaxy on an epitaxial Si surface with a low-temperature process

1993 · Hidefumi Mori, Masami Tachikawa, et al. · Applied Physics Letters · 29

Very wide spectrum multiquantum well superluminescent diode at 1.5 μm

1992 · S. Kondo, H. Yasaka, et al. · Electronics Letters · 29

1.5 µm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate

1991 · Mitsuru Sugo, Hidefumi Mori, et al. · Japanese Journal of Applied Physics · 25

PDF

Raman Scattering Study of the Soft Mode in Ferroelectric (CH3NHCH2COOH)3CaCl2

1984 · Mitsuru Sugo, Masaru Kasahara, et al. · Journal of the Physical Society of Japan · 21

Heteroepitaxial growth of InP on Si substrates

1990 · Mitsuru Sugo, Masafumi Yamaguchi, et al. · Journal of Crystal Growth · 19

Growth of antiphase-domain-free GaP on Si by organometallic vapor phase epitaxy

1988 · Mitsuru Sugo, Akio Yamamoto, et al. · Journal of Crystal Growth · 19

Heteroepitaxy of InP on Si substrates

1993 · Hidefumi Mori, Mitsuru Sugo, et al. · Advanced Materials · 18

High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes

2003 · M. Yuda, T. Sasaki, et al. · IEEE Journal of Quantum Electronics · 17

Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy

1993 · Masami Tachikawa, Hidefumi Mori, et al. · Japanese Journal of Applied Physics · 17

PDF

n+-p-p+structure InP solar cells grown by organometallic vapor-phase epitaxy

1987 · M. Sugo, A. Yamamoto, et al. · IEEE Transactions on Electron Devices · 17

Failure analysis of InGaAs/GaAs strained-Layer quantum-well lasers using a digital OBIC monitor

2006 · T. Takeshita, M. Sugo, et al. · IEEE Transactions on Electron Devices · 16

InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates

1994 · T. Sasaki, T. Enoki, et al. · Applied Physics Letters · 15

Works count: 70

Citation count: 1,462

H-index: 19

I10-index: 29