Work

Thermal annealing effects of defect reduction in GaAs on Si substrates

Year: 1990

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.346156

Authors: Masafumi Yamaguchi, Masami Tachikawa, Yoshio Itoh, Mitsuru Sugo, Susumu Kondo

Institution: NTT (Japan)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2045367303

FWCI: 1.948

Cites: 8

Cited by: 97

Related to: 10