Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques
Year: 2014
Type: article
Abstract: This paper introduces our recent challenges in fast 4H-SiC CVD growth and defect reduction. Enhanced growth rates in 4H-SiC epitaxial growth by high-speed wafer rotation and in a high-temperature gas source method promoting SiC bulk growth by increasing the gas flow velocity are demonstrated. Trials and results of deflecting threading dislocations by patterned C-face 4H-SiC epitaxial growth are also shown.
Source: Materials science forum
Authors: Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Tetsuya Miyazawa, Norihiro Hoshino, Hiroaki Fujibayashi, Hideki Ito, Masami Naitou, Hirofumi Aoki, Koichi Nishikawa, Emi Makino, Yuichiro Tokuda, Jun Kojima
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2020700522