Work

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Year: 2002

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.389-393.227

Authors: Mitsuru Hasegawa, Akihiro Miyauchi, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Toshiyuki Ohno, Johji Nishio, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

Institutions: National Institute of Advanced Industrial Science and Technology, Toshiba (Japan), Saitama University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2022829263

FWCI: 1.748

Cites:

Cited by: 6

Related to: 10