Raman studies of heavily carbon doped GaAs
Year: 1999
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.370536
Authors: M. Seon, M. Holtz, W. M. Duncan, T. S. Kim
Institutions: Texas Tech University, Texas Instruments (United States)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: Texas Tech University
OpenAlex ID: W2024907715