Work

Study of inductively coupled Cl2/BCl3 plasma process for high etch rate selective etching of via-holes in GaAs

Year: 2010

Type: article

Source: Vacuum

DOI: 10.1016/j.vacuum.2010.08.022

Authors: D.S. Rawal, V.R. Agarwal, H.S. Sharma, B.K. Sehgal, R. Muralidharan, Hitendra K. Malik

Institutions: Solid State Physics Laboratory, Indian Institute of Technology Delhi

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Defence Research and Development Organisation

OpenAlex ID: W2024926964

FWCI: 0.477

Cites: 10

Cited by: 12

Related to: 10