Get started
Author

B. K. Sehgal

Observed names: B K Sehgal, B. K Sehgal, B.K. Sehgal, Bhupender Kumar Sehgal
OpenAlex ID: A5113787544
Micro-structural evaluation of Ti/Al/Ni/Au ohmic contacts with different Ti/Al thicknesses in AlGaN/GaN HEMTs
2014 · Somna S. Mahajan, Anuradha Dhaul, et al. · Materials Science and Engineering B · 39
Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching
2012 · D.S. Rawal, B.K. Sehgal, et al. · Vacuum · 34
$\hbox{BCl}_{3}/\hbox{Cl}_{2}$-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask
2012 · D. S. Rawal, H. K. Malik, et al. · IEEE Transactions on Plasma Science · 33
Comparative study of GaN mesa etch characteristics in Cl2 based inductively coupled plasma with Ar and BCl3 as additive gases
2014 · Dipendra Singh Rawal, Henika Arora, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 22
Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma
2011 · D. S Rawal, B. K Sehgal, et al. · Plasma Science and Technology · 22
GaN etch rate and surface roughness evolution in Cl2/Ar based inductively coupled plasma etching
2012 · D.S. Rawal, Henika Arora, et al. · Thin Solid Films · 21
Study of inductively coupled Cl2/BCl3 plasma process for high etch rate selective etching of via-holes in GaAs
2010 · D.S. Rawal, V.R. Agarwal, et al. · Vacuum · 12
Thermal reliability of n-GaAs/Ti/Pt/Au Schottky contacts with thin Ti films for reduced gate resistance
1998 · B.K. Sehgal, B. Bhattacharya, et al. · Thin Solid Films · 12
Anisotropic Etching of GaAs Using CCl[sub 2]F[sub 2]/CCl[sub 4] Gases to Fabricate 200 μm Deep Via Holes for Grounding MMICs
2003 · D. S. Rawal, V. R. Agarwal, et al. · Journal of The Electrochemical Society · 11
PDF
A very wideband FET resistive MMIC double balanced mixer based on empirical non-linear cold FET model
2015 · Manu Raj, Sandeep Chaturvedi, et al. · IEEE MTT-S International Microwave and RF Conference (IMaRC) · 9
The effect of different silicon nitride passivation recipes on the DC characteristics of AlGaN/GaN HEMTs
2014 · Robert Laishram, Sunil Kumar, et al. · IEEE International Conference on Emerging Electronics (ICEE) · 5
(n)GaAs/Ti/Pt/Au Schottky contacts and their effect on MESFET's dc parameters
1997 · B.K. Sehgal, R. Gulati, et al. · Materials Science and Engineering B · 5
Effect of traps on small signal equivalent circuit in AlGaN/GaN HEMTs
2014 · Meena Mishra, Sudhir Kumar, et al. · IEEE International Conference on Emerging Electronics (ICEE) · 3
Cl2/Ar based inductively coupled plasma etching of GaN/AlGaN structure
2012 · D. S. Rawal, Henika Arora, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 3
Study of Cl2/BCl3 inductively coupled plasma for selective etching of GaAs
2009 · D. S. Rawal, Hitendra K. Malik, et al. · IEEE International Conference on Plasma Science (ICOPS) · 3
Passivation of AlGaN/GaN HEMT by Silicon Nitride
2013 · S. Dayal, Sunil Kumar, et al. · Environmental science and engineering · 2
Inverse modeling of delta doped pseudomorphic high electron mobility transistors
2004 · Meena Mishra, M. Jagadesh Kumar, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2
Selective-area ion implantation using positive photoresist mask for GaAs digital integrated circuits
1993 · A A Naik, B K Sehgal, et al. · Semiconductor Science and Technology · 2
A compact C-band down converter SiP with integrated LO in a metal ceramic package
2015 · Sandeep Chaturvedi, Manuraj, et al. · IEEE MTT-S International Microwave and RF Conference (IMaRC) · 1
Scaling of current collapse in GaN/AlGaN HEMT for microwave power applications
2015 · D. S. Rawal, Sunil Sharma, et al. · IEEE MTT-S International Microwave and RF Conference (IMaRC) · 1
GaN HEMT Based S-Band Power Amplifier
2013 · Archana Ahirwar, Poonam Singh, et al. · Environmental science and engineering · 1
A Simplified Approach for Automatic Extraction of Model Parameters of Spiral Inductors for Design of MMICs
2013 · Samuder Gupta, Subhash Chander, et al. · Environmental science and engineering · 1
Characterization of AlGaN Thickness and Sheet Carrier Concentration of AlGaN/GaN Based HEMT Using Electrical Measurement
2013 · Henika Arora, D. S. Rawal, et al. · Environmental science and engineering · 1
Design and Fabrication of GaN HEMT Based Power Amplifier
2013 · Sanjay Kumar Tomar, Meena Mishra, et al. · Environmental science and engineering · 1
A Reproducible High Etch Rate ICP Process for Etching of Via-Hole Grounds in 200μm Thick GaAs MMICs
2008 · D.S. Rawal, Vanita R. Agarwal, et al. · JSTS Journal of Semiconductor Technology and Science · 1
Works count: 42
Citation count: 249
H-index: 9
I10-index: 9
Year
Topic
Type