Work

Modified T-gates incorporating micro-airbridgesto avoid mesa sidewallcontact in AlInAs/GaInAs HEMTs.

Year: 1994

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19941104

Author: W. Patrick

Institution: ETH Zurich

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2029106917

FWCI:

Cites: 3

Cited by: 4

Related to: 10