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Author

W. Patrick

Observed names: PATRICK, WILLIAM, Patrick, W., W Patrick, William Patrick
Observed institutions: ETH Zurich, Fraunhofer Institute for Applied Solid State Physics, IBM Research - Zurich, Electromagnetic Fields Laboratory, Fraunhofer-Gesellschaft, University of Glasgow
OpenAlex ID: A5111556717
105-GHz bandwidth metal-semiconductor-metal photodiode
1988 · B.J. Van Zeghbroeck, W. Patrick, et al. · IEEE Electron Device Letters · 133
5.2-GHz bandwidth monolithic GaAs optoelectronic receiver
1988 · C.S. Harder, B. Van Zeghbroeck, et al. · IEEE Electron Device Letters · 71
Parasitic bipolar effects in submicrometer GaAs MESFET's
1987 · B.J. Van Zeghbroeck, W. Patrick, et al. · IEEE Electron Device Letters · 48
Analytical bias dependent noise model for InP HEMT's
1995 · B.-U.H. Klepser, C. Bergamaschi, et al. · IEEE Transactions on Electron Devices · 36
Very short gate-length GaAs MESFET's
1985 · W. Patrick, W.S. Mackie, et al. · IEEE Electron Device Letters · 36
Low-temperature annealed contacts to very thin GaAs epilayers
1986 · W. Patrick, W. S. Mackie, et al. · Applied Physics Letters · 26
Submicrometer GaAs MESFET with shallow channel and very high transconductance
1987 · B.J. Van Zeghbroeck, W. Patrick, et al. · IEEE Electron Device Letters · 23
High speed, monolithically integrated pin -HEMTphotoreceiver fabricated on InPwith 18 GHz bandwidth
1995 · B.-U.H. Klepser, J. Spicher, et al. · Electronics Letters · 15
Active, monolithically integrated coplanar V-band mixer
2002 · M. Schefer, U. Lott, et al. · IEEE MTT-S International Microwave Symposium digest · 13
Atomic force microscopy investigations of dry etched gate recesses for InGaAs/InAlAs-based high-electron-mobility transistors using methane–hydrogen reactive ion etching
1995 · Halit C. Duran, William Patrick, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 12
5.2GHz monolithic GaAs optoelectronic receiver
1987 · B.J. Van Zeghbroeck, Ch. Harder, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Fabrication of ultrasmall devices on thin active GaAs membranes
1987 · K. Y. Lee, J. Frost, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 8
High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with a tunable bandwidth up to 22 GHz using a novel circuit design
2002 · B.-U.H. Klepser, J. Spicher, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 7
Reactive ion etch-induced effects on 0.2 μm T-gate In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobility transistors
1996 · R. Cheung, W. Patrick, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 7
State of the Art AlInAs/GaInAs/InP HEMTs Fabricated using an Experimental Electron-Beam Lithography System
1994 · W. Patrick, C. Bergamaschi, et al. · European Solid-State Device Research Conference · 7
Optimization of the proximity parameters for the electron beam exposure of nanometer gate-length GaAs metal–semiconductor field effect transistors
1988 · W. Patrick, P. Vettiger · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 6
High-brightness broad-area lasers with high reliability for Yb-Er-fiber pumping applications
1999 · Stefan Mohrdiek, Luigi R. Brovelli, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5
Monolithic coplanar, varactor tunable V-band HEMToscillator with injection locking capability
1996 · M. Schefer, U. Lott, et al. · Electronics Letters · 5
Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT
1996 · M. Schefer, H.-P. Meier, et al. · IEEE Transactions on Microwave Theory and Techniques · 5
Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT
2002 · M. Schefer, H.-P. Meier, et al. · IEEE MTT-S International Microwave Symposium digest · 4
Determination of the noise source parameters in AlInAs/GaInAs HEMT heterostructures based on measured noise temperature dependence on the electric field
2002 · C. Bergamaschi, W. Patrick, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 4
Comparison and optimisation of different ohmic contact metallisations for InP-HEMT structures with doped and undoped cap-layers
2002 · B.-U.H. Klepser, C. Bergamaschi, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 4
An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs
1997 · H.C. Duran, R. Cheung, et al. · Microelectronic Engineering · 4
Modified T-gates incorporating micro-airbridgesto avoid mesa sidewallcontact in AlInAs/GaInAs HEMTs.
1994 · W. Patrick · Electronics Letters · 4
Polyimide as a negative electron resist and its application in crossovers and metal on polymer mask fabrication
1986 · W. Patrick, W. S. Mackie, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 4
Works count: 51
Citation count: 531
H-index: 11
I10-index: 11
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