Work

Analytical bias dependent noise model for InP HEMT's

Year: 1995

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.469392

Authors: B.-U.H. Klepser, C. Bergamaschi, M. Schefer, C.G. Diskus, W. Patrick, W. Bachtold

Institution: ETH Zurich

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Branco Weiss Fellowship – Society in Science, Eidgenössische Technische Hochschule Zürich, Paul Scherrer Institut, Universität Stuttgart

OpenAlex ID: W2109334108

FWCI: 1.854

Cites: 17

Cited by: 36

Related to: 10