Work

High speed, monolithically integrated pin -HEMTphotoreceiver fabricated on InPwith 18 GHz bandwidth

Year: 1995

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19951273

Authors: B.-U.H. Klepser, J. Spicher, M. Beck, C. Bergamaschi, W. Patrick, W. Bächtold

Institutions: ETH Zurich, École Polytechnique Fédérale de Lausanne

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2041384994

FWCI: 2.778

Cites: 5

Cited by: 15

Related to: 10