Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator
Year: 2008
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2972114
Institution: Kyushu University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2029397231