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Haigui Yang

Ohmic contact formation on n-type Ge by direct deposition of TiN
2011 · Masatoshi Iyota, Keisuke Yamamoto, et al. · Applied Physics Letters · 46
High-Performance Ge Metal–Oxide–Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO2/GeO2Bilayer Passivation
2011 · Keisuke Yamamoto, Ryuji Ueno, et al. · Applied Physics Express · 30
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Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique
2009 · Haigui Yang, Dong Wang, et al. · Applied Physics Letters · 30
Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator
2008 · Haigui Yang, Dong Wang, et al. · Applied Physics Letters · 27
Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al
2011 · Kana Hirayama, Ryuji Ueno, et al. · Japanese Journal of Applied Physics · 24
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Blazed gain grating in a four-level atomic system
2012 · Shang-qi Kuang, Hai-gui Yang · Journal of the Optical Society of America B · 20
Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation
2011 · Hiroshi Nakashima, Yoshiaki Iwamura, et al. · Applied Physics Letters · 20
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Significant Improvement of SiO2/4H-SiC Interface Properties by Electron Cyclotron Resonance Nitrogen Plasma Irradiation
2011 · Haigui Yang, Dong Wang, et al. · Journal of The Electrochemical Society · 19
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Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering
2011 · Kana Hirayama, Keisuke Yoshino, et al. · Solid-State Electronics · 17
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Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height
2012 · Keisuke Yamamoto, Kenji Harada, et al. · Japanese Journal of Applied Physics · 16
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Schottky Source/Drain Ge Metal–Oxide–Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures
2012 · Keisuke Yamamoto, Takeshi Yamanaka, et al. · Applied Physics Express · 15
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Electronic structures, phase stability and hardness of technetium boride: First-principles calculation
2010 · Jianfu Li, Xiaoli Wang, et al. · Physica B Condensed Matter · 14
Robust design of broadband EUV multilayer using multi-objective evolutionary algorithm
2017 · Shang-qi Kuang, Xue-peng Gong, et al. · Optics Communications · 13
Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors
2011 · Keisuke Yamamoto, Takeshi Yamanaka, et al. · Thin Solid Films · 12
Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions
2009 · Haigui Yang, Dong Wang, et al. · Thin Solid Films · 11
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Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique
2011 · Haigui Yang, Dong Wang, et al. · Thin Solid Films · 6
Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al2O3Deposition and Subsequent Post-Deposition Annealing
2010 · Haigui Yang, Masatoshi Iyota, et al. · Applied Physics Express · 4
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(Invited) Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs
2013 · Hiroshi Nakashima, Keisuke Yamamoto, et al. · ECS Transactions · 3
Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain
2010 · Dong Wang, Haigui Yang, et al. · Journal of Applied Physics · 3
Characterization of periodic extreme ultraviolet multilayer based on multi-objective evolutionary algorithm
2017 · Shang-qi Kuang, Xue-peng Gong, et al. · Journal of Applied Physics · 2
Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation
2008 · Dong Wang, Haigui Yang, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 2
Investigation of ZrGe Schottky source/drain on n-Ge substrates
2014 · Haigui Yang, Jinsong Gao, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
Gate Stack and Source/Drain Junction Formations for High-Mobility Ge MOSFETs
2012 · Hiroshi Nakashima, Keisuke Yamamoto, et al. · ECS Meeting Abstracts
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Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-Insulator
2011 · Dong Wang, Keisuke Yamamoto, et al. · ECS Transactions
Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing
2011 · Haigui Yang, Masatoshi Iyota, et al. · Solid-State Electronics
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Works count: 33
Citation count: 334
H-index: 13
I10-index: 15
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